All MOSFET. JMSH0406AKQ Datasheet

 

JMSH0406AKQ Datasheet and Replacement


   Type Designator: JMSH0406AKQ
   Marking Code: SH0406AQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id| ⓘ - Maximum Drain Current: 73 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 14.9 nC
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 662 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO252
 

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JMSH0406AKQ Datasheet (PDF)

 ..1. Size:358K  jiejie micro
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JMSH0406AKQ

JMSH0406AKQ40V 5.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 73 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications T

 4.1. Size:305K  jiejie micro
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JMSH0406AKQ

JMSH0406AK40V 5.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 70 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.0 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, I

 5.1. Size:345K  jiejie micro
jmsh0406ag.pdf pdf_icon

JMSH0406AKQ

JMSH0406AG40V 4.1m N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS Low Gate Charge, Qg 40 V VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 86 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.1 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE

 5.2. Size:366K  jiejie micro
jmsh0406au.pdf pdf_icon

JMSH0406AKQ

JMSH0406AU40V 4.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 58 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.3 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE

Datasheet: JMSH1002YC , JMSH1002YE , JMSH1002YTL , JMSH0406AG , JMSH0406AGD , JMSH0406AGDQ , JMSH0406AGQ , JMSH0406AK , IRFB4227 , JMSH0406AU , JMSH0406PG , JMSH0406PGD , JMSH0406PGDQ , JMSH0406PGQ , JMSH0406PK , JMSH0406PKQ , JMSH1005PC .

History: JMSH0406AK

Keywords - JMSH0406AKQ MOSFET datasheet

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