DMN2005DLP4K Datasheet and Replacement
Type Designator: DMN2005DLP4K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: X2DFN13106
DMN2005DLP4K substitution
DMN2005DLP4K Datasheet (PDF)
dmn2005dlp4k.pdf

DMN2005DLP4KDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN1310H4-6 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed
dmn2005lpk.pdf

DMN2005LPKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: S
dmn2005k.pdf

DMN2005KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020C Low Input/Output Leakage
dmn2005ufg.pdf

DMN2005UFG20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = 25C (t
Datasheet: DMG9926UDM , DMG9926USD , DMN2004DMK , DMN2004DWK , DMN2004K , DMN2004TK , DMN2004VK , DMN2004WK , RU7088R , DMN2005K , DMN2005LP4K , DMN2005LPK , DMN2009LSS , DMN2016UTS , DMN2020LSN , DMN2027LK3 , DMN2027USS .
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