All MOSFET. JMSH1010AE Datasheet

 

JMSH1010AE Datasheet and Replacement


   Type Designator: JMSH1010AE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 291 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
   Package: TO263
 

 JMSH1010AE substitution

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JMSH1010AE Datasheet (PDF)

 ..1. Size:1050K  jiejie micro
 jmsh1010ac jmsh1010ae.pdf pdf_icon

JMSH1010AE

JMSH1010ACJMSH1010AE100V 9.4mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 65 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 9.4 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom

 5.1. Size:400K  jiejie micro
 jmsh1010agq.pdf pdf_icon

JMSH1010AE

JMSH1010AGQ100V 8.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 64 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)8.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 5.2. Size:349K  jiejie micro
 jmsh1010akq.pdf pdf_icon

JMSH1010AE

JMSH1010AKQ100V 9.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 79 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 5.3. Size:369K  jiejie micro
 jmsh1010ag.pdf pdf_icon

JMSH1010AE

JMSH1010AG100V 8.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 63 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)8.8 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Automatio

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Datasheet: JMSH1006AG , JMSH1006AK , JMSH1006PC , JMSH1006PE , JMSH1006PG , JMSH1006PGS , JMSH1006PK , JMSH1010AC , IRF9540N , JMSH1010AG , JMSH1010AGQ , JMSH1010AK , JMSH1010AKQ , JMSH1010PC , JMSH1010PG , JMSH1010PK , JMSH1010PU .

History: HY4306W | TA17632 | ZVP0545GTA | 2SJ465 | AFN4946BW | DHB50N03 | L2N7002M3T5G

Keywords - JMSH1010AE MOSFET datasheet

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