JMSH1010AK Datasheet. Specs and Replacement

Type Designator: JMSH1010AK  📄📄 

Marking Code: SH1010A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 21 nC

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 291 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO252

JMSH1010AK substitution

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JMSH1010AK datasheet

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JMSH1010AK

JMSH1010AK 100V 9.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 64 A Pb-Free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.2 m RoHS and Halogen-Free Compliant Applications Power Managerment in Telecom., Industrial Au... See More ⇒

 0.1. Size:349K  jiejie micro
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JMSH1010AK

JMSH1010AKQ 100V 9.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 79 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications... See More ⇒

 5.1. Size:400K  jiejie micro
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JMSH1010AK

JMSH1010AGQ 100V 8.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 64 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications... See More ⇒

 5.2. Size:1050K  jiejie micro
jmsh1010ac jmsh1010ae.pdf pdf_icon

JMSH1010AK

JMSH1010AC JMSH1010AE 100V 9.4mW N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 65 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 9.4 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom... See More ⇒

Detailed specifications: JMSH1006PE, JMSH1006PG, JMSH1006PGS, JMSH1006PK, JMSH1010AC, JMSH1010AE, JMSH1010AG, JMSH1010AGQ, 13N50, JMSH1010AKQ, JMSH1010PC, JMSH1010PG, JMSH1010PK, JMSH1010PU, JMSH0406PU, JMSH0406PUQ, JMSH0406BUQ

Keywords - JMSH1010AK MOSFET specs

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