JMTJ3407A Datasheet: MOSFET, P-Ch, 30V, 4.1A. Full specification with pinout and replacement list

JMTJ3407A Datasheet. Specs and Replacement

Type Designator: JMTJ3407A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: SOT23

JMTJ3407A substitution

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JMTJ3407A datasheet

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JMTJ3407A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -4.1A Load Switch RDS(ON) ... See More ⇒

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JMTJ3401A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -4.2A Load Switch RDS(ON) ... See More ⇒

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30V, 5A, 25m N-channel Power Trench MOSFET JMTJ3404A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit Halogen-free; RoHS-compliant VDSS 30 V Pb-free plating VGS(th)_Typ 1.8 V ID(@VGS=10V) 5 A Applications RDS(ON)_Typ(@VGS=10V 18 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 25 mW PWM Application Power Management D G S SOT... See More ⇒

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