All MOSFET. JMTJ3407A Datasheet

 

JMTJ3407A Datasheet and Replacement


   Type Designator: JMTJ3407A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SOT23
 

 JMTJ3407A substitution

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JMTJ3407A Datasheet (PDF)

 ..1. Size:591K  jiejie micro
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JMTJ3407A

JMTJ3407ADescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -4.1A Load SwitchRDS(ON)

 7.1. Size:660K  jiejie micro
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JMTJ3407A

JMTJ3401ADescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -4.2A Load SwitchRDS(ON)

 7.2. Size:1248K  jiejie micro
 jmtj3404a.pdf pdf_icon

JMTJ3407A

30V, 5A, 25m N-channel Power Trench MOSFETJMTJ3404AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit Halogen-free; RoHS-compliantVDSS 30 V Pb-free platingVGS(th)_Typ 1.8 VID(@VGS=10V) 5 AApplicationsRDS(ON)_Typ(@VGS=10V 18 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 25 mW PWM Application Power ManagementDG SSOT

 7.3. Size:591K  jiejie micro
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JMTJ3407A

JMTJ3401BDescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -4A Load SwitchRDS(ON)

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Keywords - JMTJ3407A MOSFET datasheet

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