All MOSFET. JMTQ3010D Datasheet

 

JMTQ3010D Datasheet and Replacement


   Type Designator: JMTQ3010D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: PDFN3X3-8L-D
 

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JMTQ3010D Datasheet (PDF)

 ..1. Size:628K  jiejie micro
 jmtq3010d.pdf pdf_icon

JMTQ3010D

JMTQ3010DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 22A Load SwitchRDS(ON)

 8.1. Size:1237K  jiejie micro
 jmtq3005c.pdf pdf_icon

JMTQ3010D

30V, 61A, 5.4m N-channel Power Trench MOSFETJMTQ3005CProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 61 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.3 mWRDS(ON)_Typ(@VGS=4.5V 5.4 mWApplications Load Switch PW

 8.2. Size:1240K  jiejie micro
 jmtq3008a.pdf pdf_icon

JMTQ3010D

30V, 41A, 8.8m N-channel Power Trench MOSFETJMTQ3008AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 41 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.1 mWRDS(ON)_Typ(@VGS=4.5V 8.8 mWApplications Load Switch PW

 8.3. Size:1120K  jiejie micro
 jmtq3005a.pdf pdf_icon

JMTQ3010D

JMTQ3005ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applicationsl 30V, 50A l Load Switch RDS(ON)

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Datasheet: JMTLA3134K , JMTQ250C03D , JMTQ3003A , JMTQ3005A , JMTQ3005C , JMTQ3006B , JMTQ3006C , JMTQ3008A , 2SK3918 , JMTQ320N10A , JMTQ3400D , JMTQ380C03D , JMTQ4407A , JMTQ440P04A , JMTQ60N04B , JMTQ90N02A , JMSL0403AG .

Keywords - JMTQ3010D MOSFET datasheet

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