JMSL0406AGQ Datasheet. Specs and Replacement

Type Designator: JMSL0406AGQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.6 nS

Cossⓘ - Output Capacitance: 536 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: PDFN5X6-8L-D

JMSL0406AGQ substitution

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JMSL0406AGQ datasheet

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JMSL0406AGQ

JMSL0406AGQ 40V 4.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.2 m RDS(ON)_Typ (@ VGS = 4.5V) 5.8 m Halogen-free and RoHS-compliant AEC-Q101 Qu... See More ⇒

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JMSL0406AGQ

JMSL0406AG 40V 4.2m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th) 1.7 V High Current Capability ID (@ VGS = 10V) (1) 70 A 100% UIS Tested, 100% Rg Tested RDS(ON) (@ VGS = 10V) 4.2 m Applications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC/DC ... See More ⇒

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JMSL0406AGQ

JMSL0406AGDQ 40V 5.5mW Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 49 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.5 mW RDS(ON)_Typ (@ VGS = 4.5V) 7.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qu... See More ⇒

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JMSL0406AGQ

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Detailed specifications: JMSL0403PGQ, JMSL0403PK, JMSL0403PU, JMSL04055GQ, JMSL04055UQ, JMSL04060GDQ, JMSL0406AGD, JMSL0406AGDQ, IRF1404, JMSL0406AK, JMSL0406AKQ, JMSL1010AC, JMSL1010AG, JMSL1010AGQ, JMSL1010AK, JMSL1010AKQ, JMSL1010AP

Keywords - JMSL0406AGQ MOSFET specs

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