JMSL1010PGD Datasheet. Specs and Replacement

Type Designator: JMSL1010PGD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 731 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0117 Ohm

Package: PDFN5X6-8L-D

JMSL1010PGD substitution

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JMSL1010PGD datasheet

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JMSL1010PGD

100V, 69A, 10.8m N-channel Power SGT MOSFET JMSL1010PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 69 A RDS(ON)_Typ(@VGS=10V 9.0 mW Applications RDS(ON)_Typ(@VGS=4.5V 10.8 mW Load Switch PWM Application ... See More ⇒

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JMSL1010PGD

JMSL1010PG 100V 6.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 74 A RDS(ON)_Typ (@ VGS = 10V) 6.4 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Ro... See More ⇒

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JMSL1010PGD

100V, 75A, 10.4m N-channel Power SGT MOSFET JMSL1010PGS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 75 A RDS(ON)_Typ(@VGS=10V 7.7 mW Applications RDS(ON)_Typ(@VGS=4.5V 10.4 mW Load Switch PWM Application ... See More ⇒

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JMSL1010PGD

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Detailed specifications: JMSL1010AK, JMSL1010AKQ, JMSL1010AP, JMSL1010AU, JMSL1010AUQ, JMSL1010PC, JMSL1010PE, JMSL1010PG, 7N65, JMSL1010PGQ, JMSL1010PGS, JMSL1010PK, JMSL1010PKS, JMSL1010PP, JMSL1010PU, JMSL10A13K, JMSL10A13L

Keywords - JMSL1010PGD MOSFET specs

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