All MOSFET. JMTE060N06A Datasheet

 

JMTE060N06A Datasheet and Replacement


   Type Designator: JMTE060N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 181 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 392 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263
 

 JMTE060N06A substitution

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JMTE060N06A Datasheet (PDF)

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JMTE060N06A

JMTE060N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 120A Load SwitchR

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JMTE060N06A

70V, 80A, 6.2m N-channel Power Trench MOSFETJMTE068N07AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 70 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 80 ARDS(ON)_Typ(@VGS=10V 5.8 mWRDS(ON)_Typ(@VGS=8.0V 6.2 mWApplications Load Switch PWM Application P

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JMTE060N06A

30V, 190A, 1.9m N-channel Power Trench MOSFETJMTE018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 30 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power M

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JMTE060N06A

JMTE070N07A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 68V, 120A Load Switch R

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Datasheet: JMSL10A13P , JMSL1509PG , JMTD2N7002KS , JMTD3134K , JMTE018N03A , JMTE025N04D , JMTE035N04A , JMTE035N06D , IRFB3607 , JMTE068N07A , JMTE3002B , JMTE3003A , JMTE6888A , , , , .

History: AP3P2R2CDT

Keywords - JMTE060N06A MOSFET datasheet

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