JMTE060N06A Datasheet. Specs and Replacement

Type Designator: JMTE060N06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 181 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 392 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO263

JMTE060N06A substitution

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JMTE060N06A datasheet

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JMTE060N06A

JMTE060N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 120A Load Switch R ... See More ⇒

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JMTE060N06A

70V, 80A, 6.2m N-channel Power Trench MOSFET JMTE068N07A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 70 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 80 A RDS(ON)_Typ(@VGS=10V 5.8 mW RDS(ON)_Typ(@VGS=8.0V 6.2 mW Applications Load Switch PWM Application P... See More ⇒

 9.1. Size:1263K  jiejie micro
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JMTE060N06A

30V, 190A, 1.9m N-channel Power Trench MOSFET JMTE018N03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 30 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 190 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power M... See More ⇒

 9.2. Size:536K  jiejie micro
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JMTE060N06A

JMTE070N07A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 68V, 120A Load Switch R ... See More ⇒

Detailed specifications: JMSL10A13P, JMSL1509PG, JMTD2N7002KS, JMTD3134K, JMTE018N03A, JMTE025N04D, JMTE035N04A, JMTE035N06D, K4145, JMTE068N07A, JMTE3002B, JMTE3003A, JMTE6888A, JMTK110N06A, JMTK120N03A, JMTK130P04A, JMTK1404A1

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