JMTE068N07A Datasheet: MOSFET, N-Ch, 70V, 80A. Full specification with pinout and replacement list

JMTE068N07A Datasheet. Specs and Replacement

Type Designator: JMTE068N07A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO263

JMTE068N07A substitution

- MOSFET ⓘ Cross-Reference Search

JMTE068N07A datasheet

..1. Size:1341K jiejie micro
jmte068n07a.pdf pdf_icon

70V, 80A, 6.2m N-channel Power Trench MOSFET JMTE068N07A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 70 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 80 A RDS(ON)_Typ(@VGS=10V 5.8 mW RDS(ON)_Typ(@VGS=8.0V 6.2 mW Applications Load Switch PWM Application P... See More ⇒

8.1. Size:343K jiejie micro
jmte060n06a.pdf pdf_icon

JMTE060N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 120A Load Switch R ... See More ⇒

9.1. Size:1263K jiejie micro
jmte018n03a.pdf pdf_icon

30V, 190A, 1.9m N-channel Power Trench MOSFET JMTE018N03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 30 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 190 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power M... See More ⇒

9.2. Size:536K jiejie micro
jmte070n07a.pdf pdf_icon