JMTM330N06A Datasheet. Specs and Replacement
Type Designator: JMTM330N06A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 56 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOT23-6L
JMTM330N06A substitution
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JMTM330N06A datasheet
jmtm330n06a.pdf
60V, 4.8A, 35m N-channel Power Trench MOSFET JMTM330N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit Halogen-free; RoHS-compliant VDSS 60 V Pb-free plating VGS(th)_Typ 1.6 V ID(@VGS=10V) 4.8 A Applications RDS(ON)_Typ(@VGS=10V 31 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 35 mW PWM Application Power Management SOT-23-... See More ⇒
jmtm3406d.pdf
JMTM3406D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Application 30V, 3.8A Load Switch R ... See More ⇒
jmtm300n03d.pdf
JMTM300N03D Description JMT Dual N-channel Enhancement Mode Power MosFET Features Applications 30V, 4.8A Load Switch RDS(ON) ... See More ⇒
jmtm300c02d.pdf
JMTM300C02D Description JMT N And P-channel Enhancement Mode Power MOSFET Features Applications N-channel 20V, 3.8A Battery Protection RDS(ON) ... See More ⇒
Detailed specifications: JMTK3005C, JMTK3005L, JMTLB2N7002KDS, JMTLB3134K, JMTM170N04A, JMTM2310A, JMTM300C02D, JMTM300N03D, 20N50, JMTM3406D, JMTM3415KL, JMTM8205A, JMTM8205B, JMTM850P04A, JMTM8810KS, JMTN11DN10A, JMTN2310A
Keywords - JMTM330N06A MOSFET specs
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