JMTM3406D Datasheet. Specs and Replacement

Type Designator: JMTM3406D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.1 nS

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: SOT23-6L

JMTM3406D substitution

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JMTM3406D datasheet

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JMTM3406D

JMTM3406D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Application 30V, 3.8A Load Switch R ... See More ⇒

 8.1. Size:391K  jiejie micro
jmtm3415kl.pdf pdf_icon

JMTM3406D

JMTM3415KL Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -20V, I = -4.1A PWM Applications DS D R ... See More ⇒

 9.1. Size:715K  jiejie micro
jmtm300n03d.pdf pdf_icon

JMTM3406D

JMTM300N03D Description JMT Dual N-channel Enhancement Mode Power MosFET Features Applications 30V, 4.8A Load Switch RDS(ON) ... See More ⇒

 9.2. Size:1279K  jiejie micro
jmtm330n06a.pdf pdf_icon

JMTM3406D

60V, 4.8A, 35m N-channel Power Trench MOSFET JMTM330N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit Halogen-free; RoHS-compliant VDSS 60 V Pb-free plating VGS(th)_Typ 1.6 V ID(@VGS=10V) 4.8 A Applications RDS(ON)_Typ(@VGS=10V 31 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 35 mW PWM Application Power Management SOT-23-... See More ⇒

Detailed specifications: JMTK3005L, JMTLB2N7002KDS, JMTLB3134K, JMTM170N04A, JMTM2310A, JMTM300C02D, JMTM300N03D, JMTM330N06A, IRF520, JMTM3415KL, JMTM8205A, JMTM8205B, JMTM850P04A, JMTM8810KS, JMTN11DN10A, JMTN2310A, JMTN330N06A

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