JMTM3406D Datasheet and Replacement
Type Designator: JMTM3406D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 44 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOT23-6L
JMTM3406D substitution
JMTM3406D Datasheet (PDF)
jmtm3406d.pdf
JMTM3406DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Application 30V, 3.8A Load SwitchR
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JMTM300N03DDescriptionJMT Dual N-channel Enhancement Mode Power MosFETFeaturesApplications 30V, 4.8A Load SwitchRDS(ON)
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60V, 4.8A, 35m N-channel Power Trench MOSFETJMTM330N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit Halogen-free; RoHS-compliantVDSS 60 V Pb-free platingVGS(th)_Typ 1.6 VID(@VGS=10V) 4.8 AApplicationsRDS(ON)_Typ(@VGS=10V 31 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 35 mW PWM Application Power ManagementSOT-23-
Datasheet: JMTK3005L , JMTLB2N7002KDS , JMTLB3134K , JMTM170N04A , JMTM2310A , JMTM300C02D , JMTM300N03D , JMTM330N06A , CS150N03A8 , JMTM3415KL , JMTM8205A , JMTM8205B , JMTM850P04A , JMTM8810KS , JMTN11DN10A , JMTN2310A , JMTN330N06A .
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