JMTM3415KL Datasheet and Replacement
Type Designator: JMTM3415KL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 98 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: SOT23-6L
JMTM3415KL substitution
JMTM3415KL Datasheet (PDF)
jmtm3415kl.pdf

JMTM3415KLDescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -20V, I = -4.1A PWM ApplicationsDS DR
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JMTM3406DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Application 30V, 3.8A Load SwitchR
jmtm300n03d.pdf

JMTM300N03DDescriptionJMT Dual N-channel Enhancement Mode Power MosFETFeaturesApplications 30V, 4.8A Load SwitchRDS(ON)
jmtm330n06a.pdf

60V, 4.8A, 35m N-channel Power Trench MOSFETJMTM330N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit Halogen-free; RoHS-compliantVDSS 60 V Pb-free platingVGS(th)_Typ 1.6 VID(@VGS=10V) 4.8 AApplicationsRDS(ON)_Typ(@VGS=10V 31 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 35 mW PWM Application Power ManagementSOT-23-
Datasheet: JMTLB2N7002KDS , JMTLB3134K , JMTM170N04A , JMTM2310A , JMTM300C02D , JMTM300N03D , JMTM330N06A , JMTM3406D , IRFB31N20D , JMTM8205A , JMTM8205B , JMTM850P04A , JMTM8810KS , JMTN11DN10A , JMTN2310A , JMTN330N06A , .
Keywords - JMTM3415KL MOSFET datasheet
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MOSFET: JMTN330N06A | JMTN2310A | JMTN11DN10A | JMTM8810KS | JMTM850P04A | JMTM8205B | JMTM8205A | JMTM3415KL | JMTM3406D | JMTM330N06A | JMTM300N03D | JMTM300C02D | JMTM2310A | JMTM170N04A | JMTLB3134K | JMTLB2N7002KDS
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