JMTM8810KS Datasheet and Replacement
Type Designator: JMTM8810KS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.76 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 103 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT23-6L
JMTM8810KS substitution
JMTM8810KS Datasheet (PDF)
jmtm8810ks.pdf

JMTM8810KSDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 20V, 4.8A Load SwitchR
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JMTM850P04ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -40V, I = -5A PWM ApplicationsDS DR
jmtm8205a.pdf

JMTM8205ADescriptionJMT Dual N-channel Enhancement Mode Power MosFETFeatures Applicatiol 19.5V, 5A l Load Switch RDS(ON)
jmtm8205b.pdf

JMTM8205BDescriptionJMT Dual N-channel Enhancement Mode Power MosFETFeatures Applicatio 20V, 6A Load SwitchRDS(ON)
Datasheet: JMTM300C02D , JMTM300N03D , JMTM330N06A , JMTM3406D , JMTM3415KL , JMTM8205A , JMTM8205B , JMTM850P04A , K2611 , JMTN11DN10A , JMTN2310A , JMTN330N06A , JMTQ11DP03A , JMTQ120C03D , JMTQ120N03A , JMTQ120N03D , JMTQ120N04D .
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