JMTN2310A Datasheet and Replacement
Type Designator: JMTN2310A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: SOT89
JMTN2310A substitution
JMTN2310A Datasheet (PDF)
jmtn2310a.pdf

60V, 3A, 95.6m N-channel Power Trench MOSFETJMTN2310AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 3 A Pb-free platingRDS(ON)_Typ(@VGS=10V 85.0 mWRDS(ON)_Typ(@VGS=4.5V 95.6 mWApplications Load Switch P
Datasheet: JMTM330N06A , JMTM3406D , JMTM3415KL , JMTM8205A , JMTM8205B , JMTM850P04A , JMTM8810KS , JMTN11DN10A , IRF520 , JMTN330N06A , JMTQ11DP03A , JMTQ120C03D , JMTQ120N03A , JMTQ120N03D , JMTQ120N04D , JMTQ130N04D , JMTQ130P04A .
History: JMTLB2N7002KDS | JMTM8205B | JMTM170N04A
Keywords - JMTN2310A MOSFET datasheet
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History: JMTLB2N7002KDS | JMTM8205B | JMTM170N04A



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