JMTQ120C03D Datasheet and Replacement
Type Designator: JMTQ120C03D
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 112 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: PDFN3X3-8L-D
JMTQ120C03D substitution
JMTQ120C03D Datasheet (PDF)
jmtq120c03d.pdf
JMTQ120C03DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 30V, 11A Battery ProtectionR
jmtq120n04d.pdf
40V, 29A, 15m N-channel Power Trench MOSFETJMTQ120N04DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 29 A Pb-free platingRDS(ON)_Typ(@VGS=10V 14 mWRDS(ON)_Typ(@VGS=4.5V 15 mWApplications Load Switch PWM
jmtq120n03d.pdf
JMTQ120N03DDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications Load Switch 30V, 15A PWM ApplicationRDS(ON)
jmtq120n03a.pdf
JMTQ120N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 18A Load SwitchRDS(ON)
Datasheet: JMTM8205A , JMTM8205B , JMTM850P04A , JMTM8810KS , JMTN11DN10A , JMTN2310A , JMTN330N06A , JMTQ11DP03A , IRFZ48N , JMTQ120N03A , JMTQ120N03D , JMTQ120N04D , JMTQ130N04D , JMTQ130P04A , JMTQ160P03A , JMTQ170C04D , JMTQ190N03A .
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