All MOSFET. DMN26D0UT Datasheet

 

DMN26D0UT Datasheet and Replacement


   Type Designator: DMN26D0UT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.23 A
   Cossⓘ - Output Capacitance: 14.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT523
 

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DMN26D0UT Datasheet (PDF)

 ..1. Size:145K  diodes
 dmn26d0ut.pdf pdf_icon

DMN26D0UT

DMN26D0UTN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance: Case: SOT-523 3.0 @ 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 4.0 @ 2.5V Moisture Sensitivity: Level 1 per J-STD-020 6.0 @ 1.8V

 6.1. Size:325K  diodes
 dmn26d0udj.pdf pdf_icon

DMN26D0UT

DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET V(BR)DSS RDS(on) TA = +25C Low On-Resistance: 3.0 @ VGS= 4.5V 240mA 3.0@ 4.5V 20V 180mA 6.0 @ VGS= 1.8V 4.0@ 2.5V 6.0@1.8V 10@1.5V Description Very Low Gate Threshold Voltage, 1.05V Max This new

 6.2. Size:122K  diodes
 dmn26d0ufb4.pdf pdf_icon

DMN26D0UT

DMN26D0UFB4N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data N-Channel MOSFET Case: DFN1006H4-3 Low On-Resistance: Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 3.0 @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 4.0 @ 2.5V Terminal Connections: See Diag

 6.3. Size:1814K  cn tech public
 tpdmn26d0ufb4.pdf pdf_icon

DMN26D0UT

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Datasheet: DMN2230U , DMN2300U , DMN2300UFB , DMN2300UFB4 , DMN2400UFB4 , DMN2400UV , DMN26D0UDJ , DMN26D0UFB4 , IRFP460 , DMN2990UDJ , ZXM61N02F , ZXM62N02E6 , ZXM64N02X , ZXMD63N02X , ZXMN2088DE6 , ZXMN2A01E6 , ZXMN2A01F .

History: CEB3060 | IXTA50N28T | IXTL2x220N075T | TPM2008P3 | AFP2319AS | EM6K6 | APT18M100B

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