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JMTI210P02A Spec and Replacement


   Type Designator: JMTI210P02A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 242 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO251

 JMTI210P02A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMTI210P02A Specs

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JMTI210P02A

JMTI210P02A Description JMT P-channel Enhancement Mode Power MOSFET Features Application -20V, -20A Load Switch R ... See More ⇒

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JMTI210P02A

JMTI290N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 20A Load Switch R ... See More ⇒

Detailed specifications: JMSL0605AGD , JMSL0605AGDQ , JMSL0605PG , JMSL0606AC , JMSL0606AE , JMTI080N02A , JMTI080P03A , JMTI10N10A , IRF640N , JMTI290N06A , JMTI3005A , JMTI320N10A , JMTI50N06B , JMTI60N04A , JMTK018N03A , JMTK035N04L , JMTK050P03A .

Keywords - JMTI210P02A MOSFET specs

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