JMTK060N06A Datasheet. Specs and Replacement
Type Designator: JMTK060N06A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 181 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 392 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
Package: TO252-4R
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JMTK060N06A substitution
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JMTK060N06A datasheet
jmtk060n06a.pdf
JMTK060N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 120A Load Switch R ... See More ⇒
jmtk060p03a.pdf
-30V, -90A, 4.2m P-channel Power Trench MOSFET JMTK060P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS -30 V 100% Vds TESTED VGS(th)_Typ -1.8 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -90 A RDS(ON)_Typ(@VGS=-10V 4.2 mW Pb-free plating RDS(ON)_Typ(@VGS=-4.5V 6.3 mW Applications Load Switc... See More ⇒
jmtk068n07a.pdf
70V, 51A, 6.1m N-channel Power Trench MOSFET JMTK068N07A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 70 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 51 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.1 mW RDS(ON)_Typ(@VGS=8.0V 6.5 mW Applications Load Switch P... See More ⇒
Detailed specifications: JMTI290N06A, JMTI3005A, JMTI320N10A, JMTI50N06B, JMTI60N04A, JMTK018N03A, JMTK035N04L, JMTK050P03A, P55NF06, JMTK060P03A, JMTK068N07A, JMTK080P03A, JMTP045N03A, JMTP075N06A, JMTP080N04A, JMTP080N04D, JMTP080P03A
Keywords - JMTK060N06A MOSFET specs
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