JMTK080P03A Datasheet. Specs and Replacement
Type Designator: JMTK080P03A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 471 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
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JMTK080P03A substitution
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JMTK080P03A datasheet
jmtk080p03a.pdf
JMTK080P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -60A Load Switch RDS(ON) ... See More ⇒
jmtk085p04a.pdf
JMTK085P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -40V, I = -70A PWM Applications DS D R ... See More ⇒
jmtk060p03a.pdf
-30V, -90A, 4.2m P-channel Power Trench MOSFET JMTK060P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS -30 V 100% Vds TESTED VGS(th)_Typ -1.8 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -90 A RDS(ON)_Typ(@VGS=-10V 4.2 mW Pb-free plating RDS(ON)_Typ(@VGS=-4.5V 6.3 mW Applications Load Switc... See More ⇒
Detailed specifications: JMTI50N06B, JMTI60N04A, JMTK018N03A, JMTK035N04L, JMTK050P03A, JMTK060N06A, JMTK060P03A, JMTK068N07A, IRFP250N, JMTP045N03A, JMTP075N06A, JMTP080N04A, JMTP080N04D, JMTP080P03A, JMTP085P02A, JMTP110N06A, JMTP110N06D
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