JMTK080P03A Datasheet. Specs and Replacement

Type Designator: JMTK080P03A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 471 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO252

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JMTK080P03A datasheet

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JMTK080P03A

JMTK080P03A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -60A Load Switch RDS(ON) ... See More ⇒

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JMTK080P03A

JMTK085P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -40V, I = -70A PWM Applications DS D R ... See More ⇒

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JMTK080P03A

-30V, -90A, 4.2m P-channel Power Trench MOSFET JMTK060P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS -30 V 100% Vds TESTED VGS(th)_Typ -1.8 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -90 A RDS(ON)_Typ(@VGS=-10V 4.2 mW Pb-free plating RDS(ON)_Typ(@VGS=-4.5V 6.3 mW Applications Load Switc... See More ⇒

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JMTK080P03A

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Detailed specifications: JMTI50N06B, JMTI60N04A, JMTK018N03A, JMTK035N04L, JMTK050P03A, JMTK060N06A, JMTK060P03A, JMTK068N07A, IRFP250N, JMTP045N03A, JMTP075N06A, JMTP080N04A, JMTP080N04D, JMTP080P03A, JMTP085P02A, JMTP110N06A, JMTP110N06D

Keywords - JMTK080P03A MOSFET specs

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