JMTP110N06D Spec and Replacement
Type Designator: JMTP110N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 183 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOP8
JMTP110N06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JMTP110N06D Specs
jmtp110n06a.pdf
JMTP110N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,12A Load Switch R ... See More ⇒
jmtp11dn10a.pdf
JMTP11DN10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V, 3A Load Switch R ... See More ⇒
jmtp160p03d.pdf
-30V, -11A, 16m P-channel Power Trench MOSFET JMTP160P03D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V Halogen-free; RoHS-compliant VGS(th)_Typ -1.7 V Pb-free plating ID(@VGS=10V) -11 A RDS(ON)_Typ(@VGS=-10V 12 mW Applications RDS(ON)_Typ(@VGS=-4.5V 16 mW Load Switch PWM Application ... See More ⇒
Detailed specifications: JMTK080P03A , JMTP045N03A , JMTP075N06A , JMTP080N04A , JMTP080N04D , JMTP080P03A , JMTP085P02A , JMTP110N06A , IRF4905 , JMTP11DN10A , JMTQ025N02A , JMTQ040N03A , JMTQ050N02A , JMTQ055N04A , JMTQ062N04A , JMTQ075N03D , JMTQ080P03A .
History: JMTP110N06A
Keywords - JMTP110N06D MOSFET specs
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History: JMTP110N06A
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