JMTP110N06D Datasheet. Specs and Replacement

Type Designator: JMTP110N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 183 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOP8

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JMTP110N06D datasheet

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JMTP110N06D

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JMTP110N06D

JMTP110N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,12A Load Switch R ... See More ⇒

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JMTP110N06D

JMTP11DN10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V, 3A Load Switch R ... See More ⇒

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JMTP110N06D

-30V, -11A, 16m P-channel Power Trench MOSFET JMTP160P03D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V Halogen-free; RoHS-compliant VGS(th)_Typ -1.7 V Pb-free plating ID(@VGS=10V) -11 A RDS(ON)_Typ(@VGS=-10V 12 mW Applications RDS(ON)_Typ(@VGS=-4.5V 16 mW Load Switch PWM Application ... See More ⇒

Detailed specifications: JMTK080P03A, JMTP045N03A, JMTP075N06A, JMTP080N04A, JMTP080N04D, JMTP080P03A, JMTP085P02A, JMTP110N06A, IRF4905, JMTP11DN10A, JMTQ025N02A, JMTQ040N03A, JMTQ050N02A, JMTQ055N04A, JMTQ062N04A, JMTQ075N03D, JMTQ080P03A

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