JMTQ050N02A Datasheet and Replacement
Type Designator: JMTQ050N02A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 396 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
Package: PDFN3X3-8L
JMTQ050N02A substitution
JMTQ050N02A Datasheet (PDF)
jmtq050n02a.pdf

JMTQ050N02ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 20V, 50A Load SwitchRDS(ON)
jmtq055n04a.pdf

JMTQ055N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 70A Load SwitchRDS(ON)
jmtq040n03a.pdf

JMTQ040N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 60A Load SwitchRDS(ON)
jmtq075n03d.pdf

JMTQ075N03DDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 25A Load SwitchRDS(ON)
Datasheet: JMTP080N04D , JMTP080P03A , JMTP085P02A , JMTP110N06A , JMTP110N06D , JMTP11DN10A , JMTQ025N02A , JMTQ040N03A , 4435 , JMTQ055N04A , JMTQ062N04A , JMTQ075N03D , JMTQ080P03A , JMSL0606AGD , JMSL0606AGQ , JMSL0606AGWQ , JMSL0606AK .
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