ZXMN2A01E6 MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZXMN2A01E6
   Marking Code: 2A1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 3.1 A
   Qgⓘ - Total Gate Charge: 3 nC
   Cossⓘ - Output Capacitance: 303 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT26

ZXMN2A01E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZXMN2A01E6 Datasheet (PDF)

..1. Size:199K diodes
zxmn2a01e6.pdf

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

0.1. Size:198K zetex
zxmn2a01e6ta.pdf

0.2. Size:198K zetex
zxmn2a01e6tc.pdf

6.1. Size:217K diodes
zxmn2a01f.pdf

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

6.2. Size:79K tysemi
zxmn2a01f.pdf

Product specificationZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from TY utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23

6.3. Size:216K zetex
zxmn2a01fta.pdf