Справочник MOSFET. ZXMN2A01E6

 

ZXMN2A01E6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMN2A01E6
   Маркировка: 2A1
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.7 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 0.7 V
   Максимально допустимый постоянный ток стока |Id|: 3.1 A
   Общий заряд затвора (Qg): 3 nC
   Выходная емкость (Cd): 303 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.12 Ohm
   Тип корпуса: SOT26

 Аналог (замена) для ZXMN2A01E6

 

 

ZXMN2A01E6 Datasheet (PDF)

 ..1. Size:199K  diodes
zxmn2a01e6.pdf

ZXMN2A01E6
ZXMN2A01E6

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

 0.1. Size:198K  zetex
zxmn2a01e6ta.pdf

ZXMN2A01E6
ZXMN2A01E6

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

 0.2. Size:198K  zetex
zxmn2a01e6tc.pdf

ZXMN2A01E6
ZXMN2A01E6

ZXMN2A01E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT23-6FEATURES Low on-resistance

 6.1. Size:217K  diodes
zxmn2a01f.pdf

ZXMN2A01E6
ZXMN2A01E6

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 6.2. Size:79K  tysemi
zxmn2a01f.pdf

ZXMN2A01E6
ZXMN2A01E6

Product specificationZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from TY utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23

 6.3. Size:216K  zetex
zxmn2a01fta.pdf

ZXMN2A01E6
ZXMN2A01E6

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 6.4. Size:216K  zetex
zxmn2a01ftc.pdf

ZXMN2A01E6
ZXMN2A01E6

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top