JMTK10N10A Datasheet and Replacement
Type Designator: JMTK10N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
Package: TO252
JMTK10N10A substitution
JMTK10N10A Datasheet (PDF)
jmtk10n10a.pdf
JMTK10N10ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 100V, 10A Load SwitchR
jmtk100n02a.pdf
JMTK100N02ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 20V, 30A Load SwitchRDS(ON)
jmtk100p03a.pdf
-30V,-55A, 8.9m P-channel Power Trench MOSFETJMTK100P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V 100% Vds TestedVGS(th)_Typ -1.6 V Halogen-free; RoHS-compliantID(@VGS=-10V) -55 A ApplicationsRDS(ON)_Typ(@VGS=-10V 6.1 mW Load Switch RDS(ON)_Typ(@VGS=-4.5V 8.9 mW PWM Applica
jmtk100n03a.pdf
JMTK100N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 40A Load SwitchRDS(ON)
Datasheet: JMSL10130AY , JMSL10130PUD , JMSL1013AGD , JMSL1018AG , JMTK085P04A , JMTK100N02A , JMTK100N03A , JMTK100P03A , IRF730 , JMTK3006B , JMTK3006C , JMTK3006D , JMTK3006E , JMTK320N10A , JMTK330N06A , JMTK340P03A , JMTK4004A .
History: JMSL0609AG
Keywords - JMTK10N10A MOSFET datasheet
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History: JMSL0609AG
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