JMTK10N10A Datasheet. Specs and Replacement

Type Designator: JMTK10N10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm

Package: TO252

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JMTK10N10A datasheet

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JMTK10N10A

JMTK10N10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V, 10A Load Switch R ... See More ⇒

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JMTK10N10A

JMTK100N02A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 30A Load Switch RDS(ON) ... See More ⇒

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JMTK10N10A

-30V,-55A, 8.9m P-channel Power Trench MOSFET JMTK100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -55 A Applications RDS(ON)_Typ(@VGS=-10V 6.1 mW Load Switch RDS(ON)_Typ(@VGS=-4.5V 8.9 mW PWM Applica... See More ⇒

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JMTK10N10A

JMTK100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 40A Load Switch RDS(ON) ... See More ⇒

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Detailed specifications: JMSL10130AY, JMSL10130PUD, JMSL1013AGD, JMSL1018AG, JMTK085P04A, JMTK100N02A, JMTK100N03A, JMTK100P03A, IRFB31N20D, JMTK3006B, JMTK3006C, JMTK3006D, JMTK3006E, JMTK320N10A, JMTK330N06A, JMTK340P03A, JMTK4004A

Keywords - JMTK10N10A MOSFET specs

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