All MOSFET. ZXMN2A01F Datasheet

 

ZXMN2A01F Datasheet and Replacement


   Type Designator: ZXMN2A01F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.806 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Cossⓘ - Output Capacitance: 303 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT23
 

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ZXMN2A01F Datasheet (PDF)

 ..1. Size:217K  diodes
 zxmn2a01f.pdf pdf_icon

ZXMN2A01F

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 ..2. Size:79K  tysemi
 zxmn2a01f.pdf pdf_icon

ZXMN2A01F

Product specificationZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from TY utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23

 0.1. Size:216K  zetex
 zxmn2a01fta.pdf pdf_icon

ZXMN2A01F

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 0.2. Size:216K  zetex
 zxmn2a01ftc.pdf pdf_icon

ZXMN2A01F

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

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Datasheet: DMN26D0UT , DMN2990UDJ , ZXM61N02F , ZXM62N02E6 , ZXM64N02X , ZXMD63N02X , ZXMN2088DE6 , ZXMN2A01E6 , P55NF06 , ZXMN2A02N8 , ZXMN2A02X8 , ZXMN2A03E6 , ZXMN2A04DN8 , ZXMN2A14F , ZXMN2AMC , ZXMN2B01F , ZXMN2B03E6 .

History: NTD5413N

Keywords - ZXMN2A01F MOSFET datasheet

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