Справочник MOSFET. ZXMN2A01F

 

ZXMN2A01F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN2A01F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.806 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.2 A
   Cossⓘ - Выходная емкость: 303 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для ZXMN2A01F

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMN2A01F Datasheet (PDF)

 ..1. Size:217K  diodes
 zxmn2a01f.pdf pdf_icon

ZXMN2A01F

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 ..2. Size:79K  tysemi
 zxmn2a01f.pdf pdf_icon

ZXMN2A01F

Product specificationZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from TY utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23

 0.1. Size:216K  zetex
 zxmn2a01fta.pdf pdf_icon

ZXMN2A01F

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 0.2. Size:216K  zetex
 zxmn2a01ftc.pdf pdf_icon

ZXMN2A01F

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DMN26D0UT , DMN2990UDJ , ZXM61N02F , ZXM62N02E6 , ZXM64N02X , ZXMD63N02X , ZXMN2088DE6 , ZXMN2A01E6 , P55NF06 , ZXMN2A02N8 , ZXMN2A02X8 , ZXMN2A03E6 , ZXMN2A04DN8 , ZXMN2A14F , ZXMN2AMC , ZXMN2B01F , ZXMN2B03E6 .

 

 
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