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JMSL060SPGQ Spec and Replacement


   Type Designator: JMSL060SPGQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 283 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 4458 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
   Package: PDFN5X6-8L

 JMSL060SPGQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMSL060SPGQ Specs

 ..1. Size:677K  jiejie micro
jmsl060spgq.pdf pdf_icon

JMSL060SPGQ

60V, 283A, 1.4m N-channel Power SGT MOSFET JMSL060SPGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 283 A RDS(ON)_Typ(@VGS=10V 1.0 m Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=4.5V 1.4 m AEC-Q101 Qualified Applications ... See More ⇒

 7.1. Size:277K  1
jmsl0606ag.pdf pdf_icon

JMSL060SPGQ

JMSL0606AG 60V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.8 V High Current Capability ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V) 4.0 m 100% UIS Tested, 100% Rg Tested RDS(ON) _Typ(@ VGS = 4.5V) 5.2 m Applications Power Managerment in Telecom., Industrial... See More ⇒

 7.2. Size:319K  jiejie micro
jmsl0609ap.pdf pdf_icon

JMSL060SPGQ

JMSL0609AP 60V 7.5m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 13.6 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 7.5 m RDS(ON)_Typ (@ VGS = 4.5V) 9.5 m Halogen-free and RoHS-compliant Applications Power Manag... See More ⇒

 7.3. Size:397K  jiejie micro
jmsl0601bg.pdf pdf_icon

JMSL060SPGQ

JMSL0601BG 60V 1.25m N-Ch Power MOSFET Features Product Summary Low RDS(ON) Parameter Value Unit Low Gate Charge VDS 60 V VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 226 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.25 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 1.8 m Applications Power Mana... See More ⇒

Detailed specifications: JMSL0609AGWQ , JMSL0609AK , JMSL0609AKQ , JMSL0609AP , JMSL0609APD , JMSL0609AU , JMSL0609AUQ , JMSL0609PPD , IRF3205 , JMSL0610AGD , JMSL0610AGDQ , JMSL0611PG , JMSL0611PGD , JMSL0611PP , JMTK480N06A , JMTK500N10A , JMTK50N03A .

History: AOTF10T60P

Keywords - JMSL060SPGQ MOSFET specs

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