JMSL0611PGD Datasheet. Specs and Replacement

Type Designator: JMSL0611PGD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 371 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: PDFN5X6-8L-D

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JMSL0611PGD substitution

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JMSL0611PGD datasheet

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JMSL0611PGD

60V, 31A, 13.7m Dual N-channel Power SGT MOSFET JMSL0611PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 31 A RDS(ON)_Typ(@VGS=10V 10.7 mW Applications RDS(ON)_Typ(@VGS=4.5V 13.7 mW Load Switch PWM Application ... See More ⇒

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JMSL0611PGD

60V, 69A, 12.3m N-channel Power SGT MOSFET JMSL0611PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 69 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.1 mW RDS(ON)_Typ(@VGS=4.5V 12.3 mW Applications Load Switch PW... See More ⇒

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JMSL0611PGD

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JMSL0611PGD

60V, 34A, 12.2m N-channel Power SGT MOSFET JMSL0611PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 34 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.0 mW RDS(ON)_Typ(@VGS=4.5V 12.2 mW Applications Load Switch PW... See More ⇒

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Detailed specifications: JMSL0609APD, JMSL0609AU, JMSL0609AUQ, JMSL0609PPD, JMSL060SPGQ, JMSL0610AGD, JMSL0610AGDQ, JMSL0611PG, IRF540N, JMSL0611PP, JMTK480N06A, JMTK500N10A, JMTK50N03A, JMTK50N06B, JMTK50P02A, JMTK50P03A, JMTK58N06B

Keywords - JMSL0611PGD MOSFET specs

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