JMTK50N06B Datasheet. Specs and Replacement

Type Designator: JMTK50N06B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO252

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JMTK50N06B datasheet

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JMTK50N06B

60V, 50A, 13.7m N-channel Power Trench MOSFET JMTK50N06B Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 50 A RDS(ON)_Typ(@VGS=10V 12.2 mW Applications RDS(ON)_Typ(@VGS=4.5V 13.7 mW Load Switch PWM Application ... See More ⇒

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 jmtk50n03a.pdf pdf_icon

JMTK50N06B

JMTK50N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 50A Load Switch RDS(ON) ... See More ⇒

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 jmtk500n10a.pdf pdf_icon

JMTK50N06B

100V, 20A, 36m N-channel Power Trench MOSFET JMTK500N10A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 20 A RDS(ON)_Typ(@VGS=10V 34 mW Applications RDS(ON)_Typ(@VGS=4.5V 36 mW Load Switch PWM Application Po... See More ⇒

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 jmtk50p02a.pdf pdf_icon

JMTK50N06B

JMTK50P02A Description JMT P-channel MOSFET Features Application V =-20V, I =-60A PWM Applications DS D R ... See More ⇒

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Detailed specifications: JMSL0610AGD, JMSL0610AGDQ, JMSL0611PG, JMSL0611PGD, JMSL0611PP, JMTK480N06A, JMTK500N10A, JMTK50N03A, IRF640, JMTK50P02A, JMTK50P03A, JMTK58N06B, JMTK60N04B, JMTK70N07A, JMTK75N02A, JMTK80N06A, JMTK90N02A

Keywords - JMTK50N06B MOSFET specs

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