All MOSFET. JMTK50P02A Datasheet

 

JMTK50P02A Datasheet and Replacement


   Type Designator: JMTK50P02A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 505 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO252
 

 JMTK50P02A substitution

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JMTK50P02A Datasheet (PDF)

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JMTK50P02A

JMTK50P02A Description JMT P-channel MOSFET Features Application V =-20V, I =-60A PWM Applications DS DR

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JMTK50P02A

JMTK50P03ADescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -50A Load SwitchRDS(ON)

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JMTK50P02A

JMTK50N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 50A Load SwitchRDS(ON)

 8.2. Size:1174K  jiejie micro
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JMTK50P02A

100V, 20A, 36m N-channel Power Trench MOSFETJMTK500N10AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 20 ARDS(ON)_Typ(@VGS=10V 34 mWApplicationsRDS(ON)_Typ(@VGS=4.5V 36 mW Load Switch PWM Application Po

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Datasheet: JMSL0610AGDQ , JMSL0611PG , JMSL0611PGD , JMSL0611PP , JMTK480N06A , JMTK500N10A , JMTK50N03A , JMTK50N06B , IRF1404 , JMTK50P03A , JMTK58N06B , JMTK60N04B , JMTK70N07A , JMTK75N02A , JMTK80N06A , JMTK90N02A , JMTQ100N03A .

Keywords - JMTK50P02A MOSFET datasheet

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