All MOSFET. ZXMN2A04DN8 Datasheet

 

ZXMN2A04DN8 Datasheet and Replacement


   Type Designator: ZXMN2A04DN8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 7.7 A
   Cossⓘ - Output Capacitance: 1880 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO8
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ZXMN2A04DN8 Datasheet (PDF)

 ..1. Size:179K  diodes
 zxmn2a04dn8.pdf pdf_icon

ZXMN2A04DN8

ZXMN2A04DN8DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESSO8 Low on-resista

 ..2. Size:895K  cn vbsemi
 zxmn2a04dn8.pdf pdf_icon

ZXMN2A04DN8

ZXMN2A04DN8www.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4

 7.1. Size:197K  diodes
 zxmn2a03e6.pdf pdf_icon

ZXMN2A04DN8

ZXMN2A03E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan

 7.2. Size:217K  diodes
 zxmn2a01f.pdf pdf_icon

ZXMN2A04DN8

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

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History: BF910 | 2SK3731 | BFC47 | SIHB22N65E | SM3117NSU | ZXMP3A17E6TA | FDC6305N

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