Справочник MOSFET. ZXMN2A04DN8

 

ZXMN2A04DN8 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN2A04DN8
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.7 A
   Cossⓘ - Выходная емкость: 1880 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

ZXMN2A04DN8 Datasheet (PDF)

 ..1. Size:179K  diodes
 zxmn2a04dn8.pdf pdf_icon

ZXMN2A04DN8

ZXMN2A04DN8DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESSO8 Low on-resista

 ..2. Size:895K  cn vbsemi
 zxmn2a04dn8.pdf pdf_icon

ZXMN2A04DN8

ZXMN2A04DN8www.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4

 7.1. Size:197K  diodes
 zxmn2a03e6.pdf pdf_icon

ZXMN2A04DN8

ZXMN2A03E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURES Low on-resistan

 7.2. Size:217K  diodes
 zxmn2a01f.pdf pdf_icon

ZXMN2A04DN8

ZXMN2A01F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

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