JMTQ100N04A Datasheet. Specs and Replacement

Type Designator: JMTQ100N04A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm

Package: PDFN3X3-8L

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JMTQ100N04A datasheet

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JMTQ100N04A

JMTQ100N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 30A Load Switch RDS(ON) ... See More ⇒

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JMTQ100N04A

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JMTQ100N04A

JMTQ100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 25A Load Switch RDS(ON) ... See More ⇒

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JMTQ100N04A

-30V,-40A, 9.3m P-channel Power Trench MOSFET JMTQ100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -40 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 6.4 mW RDS(ON)_Typ(@VGS=-4.5V 9.3 mW Applications Load Swi... See More ⇒

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Detailed specifications: JMTK58N06B, JMTK60N04B, JMTK70N07A, JMTK75N02A, JMTK80N06A, JMTK90N02A, JMTQ100N03A, JMTQ100N03D, IRFB4115, JMTQ100P03A, JMTQ11DN10A, JMSL0611PU, JMSL0611PUD, JMSL06120UQ, JMSL0612AG, JMSL0612AGQ, JMSL0612AK

Keywords - JMTQ100N04A MOSFET specs

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