JMSL0611PU Datasheet. Specs and Replacement
Type Designator: JMSL0611PU 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0117 Ohm
Package: PDFN3X3-8L
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JMSL0611PU substitution
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JMSL0611PU datasheet
jmsl0611pu.pdf
60V, 34A, 12.2m N-channel Power SGT MOSFET JMSL0611PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 34 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.0 mW RDS(ON)_Typ(@VGS=4.5V 12.2 mW Applications Load Switch PW... See More ⇒
jmsl0611pp.pdf
60V, 10A, 12.3m N-channel Power SGT MOSFET JMSL0611PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 10 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.1 mW RDS(ON)_Typ(@VGS=4.5V 12.3 mW Applications Load Switch PW... See More ⇒
jmsl0611pg.pdf
60V, 69A, 12.3m N-channel Power SGT MOSFET JMSL0611PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 69 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.1 mW RDS(ON)_Typ(@VGS=4.5V 12.3 mW Applications Load Switch PW... See More ⇒
Detailed specifications: JMTK75N02A, JMTK80N06A, JMTK90N02A, JMTQ100N03A, JMTQ100N03D, JMTQ100N04A, JMTQ100P03A, JMTQ11DN10A, IRF9540, JMSL0611PUD, JMSL06120UQ, JMSL0612AG, JMSL0612AGQ, JMSL0612AK, JMSL0612AKQ, JMSL0612AU, JMSL0612AUQ
Keywords - JMSL0611PU MOSFET specs
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