JMSL1006PGQ Datasheet. Specs and Replacement

Type Designator: JMSL1006PGQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 658 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: PDFN5X6-8L

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JMSL1006PGQ substitution

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JMSL1006PGQ datasheet

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JMSL1006PGQ

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JMSL1006PGQ

100V, 109A, 6.4m N-channel Power SGT MOSFET JMSL1006PGS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 109 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications RDS(ON)_Typ(@VGS=4.5V 6.4 mW Load Switch PWM Application ... See More ⇒

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JMSL1006PGQ

100V, 115A, 5.5m N-channel Power SGT MOSFET JMSL1006PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 115 A RDS(ON)_Typ(@VGS=10V 4.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 5.5 mW Load Switch PWM Application P... See More ⇒

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JMSL1006PGQ

JMSL1006AGQ 100V 4.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 110 A RDS(ON) (@ VGS = 10V) 4.7 m Pb-free Lead Plating RDS(ON) (@ VGS = 4.5V) 5.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified... See More ⇒

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Detailed specifications: JMSL1004RG, JMSL1005PC, JMSL1005PG, JMSL1005PK, JMSL1006AG, JMSL1006AGQ, JMSL1006AK, JMSL1006PG, 2N7002, JMSL1006PGS, JMSL1008AC, JMSL1008AE, JMSL1008AG, JMSL1008AGQ, JMTG060P03A, JMTG062N04D, JMTG070N06A

Keywords - JMSL1006PGQ MOSFET specs

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