JVE101N MOSFET: N-Ch, 100V, 260A. Full datasheet with pinout, specifications and replacement transistor list

JVE101N Datasheet (PDF)

..1. Size:716K jiejie micro
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JVE101N100V 1.6mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 260 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mWApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC

9.1. Size:1078K jiejie micro
jve102t.pdf pdf_icon

JVE102T100V 2.3mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 247 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.3 mW

9.2. Size:1036K jiejie micro
jve103t.pdf pdf_icon

JVE103T100V 3.0mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rgg Tested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 184 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3 mW Pb-free Lead Plating

9.3. Size:1022K jiejie micro
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JVE102G100V 2.4mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 200 A RDS(ON) (@ VGS = 10V) 2.4 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robotics Curr

Datasheet: JMSL1040AU , JMSL1040AUD , JMSL1040AUQ , JMSL1040AV , JMSL1040AVQ , JMSL1040AY , JMSL1040PGDQ , JMSL1040PGQ , IRFP250 , JVE102G , JVE102T , JVE103T , JVL101N , JVL102E , JVL102T , JVL102Y , JMTV3400A .