All MOSFET. SLA10N03T Datasheet

 

SLA10N03T Datasheet and Replacement


   Type Designator: SLA10N03T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TDFN2X2
 

 SLA10N03T substitution

   - MOSFET ⓘ Cross-Reference Search

 

SLA10N03T Datasheet (PDF)

 ..1. Size:2698K  maple semi
 sla10n03t.pdf pdf_icon

SLA10N03T

SLA10N03T30V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 10.6A, 30V, RDS(on),Typ = 11mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 17nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in t

Datasheet: JMTY2310A , JVC085T , JVC103K , JVC103T , JVC105E , JVC113T , JVC502E , SLA08N10G , AO3400A , SLB60R105E7D , SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB .

History: SLU4N65U | 2SK2876-01MR | BUK436-200A | UT3N06G-AE3

Keywords - SLA10N03T MOSFET datasheet

 SLA10N03T cross reference
 SLA10N03T equivalent finder
 SLA10N03T lookup
 SLA10N03T substitution
 SLA10N03T replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.