SLA10N03T Specs and Replacement
Type Designator: SLA10N03T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 99 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TDFN2X2
SLA10N03T substitution
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SLA10N03T datasheet
sla10n03t.pdf
SLA10N03T 30V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 10.6A, 30V, RDS(on),Typ = 11m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 17nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse in t... See More ⇒
Detailed specifications: JMTY2310A, JVC085T, JVC103K, JVC103T, JVC105E, JVC113T, JVC502E, SLA08N10G, AO3400A, SLB60R105E7D, SLB65R380E7C, SLC013RN06G, SLD07RN10G, SLD10N65U, SLD110N02TB, SLD120N03TB, SLD140N03TB
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