All MOSFET. SLD10N65U Datasheet

 

SLD10N65U Datasheet and Replacement


   Type Designator: SLD10N65U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 212 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.09 Ohm
   Package: TO252
 

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SLD10N65U Datasheet (PDF)

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SLD10N65U

SLD10N65U650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 10A, 650V, RDS(on),typ =0.93planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 26nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

Datasheet: JVC113T , JVC502E , SLA08N10G , SLA10N03T , SLB60R105E7D , SLB65R380E7C , SLC013RN06G , SLD07RN10G , 60N06 , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB , SLD60N04TB , SLD65R1K2E7 , 24N6LG , 2SK737 .

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