SLD10N65U PDF and Equivalents Search

 

SLD10N65U Specs and Replacement

Type Designator: SLD10N65U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 212 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 113 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.09 Ohm

Package: TO252

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SLD10N65U datasheet

 ..1. Size:4841K  maple semi
 sld10n65u.pdf pdf_icon

SLD10N65U

SLD10N65U 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 10A, 650V, RDS(on),typ =0.93 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 26nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en- ... See More ⇒

Detailed specifications: JVC113T, JVC502E, SLA08N10G, SLA10N03T, SLB60R105E7D, SLB65R380E7C, SLC013RN06G, SLD07RN10G, IRFZ48N, SLD110N02TB, SLD120N03TB, SLD140N03TB, SLD40N03TB, SLD60N04TB, SLD65R1K2E7, 24N6LG, 2SK737

Keywords - SLD10N65U MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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