All MOSFET. SLD65R1K2E7 Datasheet

 

SLD65R1K2E7 Datasheet and Replacement


   Type Designator: SLD65R1K2E7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO252
 

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SLD65R1K2E7 Datasheet (PDF)

 ..1. Size:4820K  maple semi
 sld65r1k2e7.pdf pdf_icon

SLD65R1K2E7

SLD65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switching

 8.1. Size:5183K  maple semi
 sld65r380e7c.pdf pdf_icon

SLD65R1K2E7

SLD65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.2. Size:5187K  maple semi
 sld65r280e7c.pdf pdf_icon

SLD65R1K2E7

SLD65R280E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 14A, 650V, RDS(on),Typ = 230mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.3. Size:791K  maple semi
 sld65r950s2.pdf pdf_icon

SLD65R1K2E7

SLD65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

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History: SLD140N03TB

Keywords - SLD65R1K2E7 MOSFET datasheet

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