SLD65R1K2E7 - описание и поиск аналогов

SLD65R1K2E7 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 4.9A, 650V, RDS(on),Typ = 1.0 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switching

SLD65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi

SLD65R280E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 14A, 650V, RDS(on),Typ = 230m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi

SLD65R950S2 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 650V, RDS(on) = 950m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, and withstand h

SLD65R600E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 8.4A, 650V, RDS(on),Typ = 510m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 13nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch

SLD65R700S2/SLU65R700S2 650V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 650V, RDS(on)typ= 0.55 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per

SLD65R420S2/SLU65R420S2 650V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 650V, RDS(on)typ= 0.33 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 23nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe