24N6LG Specs and Replacement
Type Designator: 24N6LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 typ Ohm
Package: TO252
24N6LG substitution
- MOSFET ⓘ Cross-Reference Search
24N6LG datasheet
24n6lg.pdf
24N6LG-VB TO252 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for an... See More ⇒
Detailed specifications: SLD07RN10G, SLD10N65U, SLD110N02TB, SLD120N03TB, SLD140N03TB, SLD40N03TB, SLD60N04TB, SLD65R1K2E7, K2611, 2SK737, STF4N90K5, SLF4N65SV, SLF65R180E7C, SLF65R1K2E7, SLF65R280E7C, SLF65R380E7C, SLF65R600E7C
Keywords - 24N6LG MOSFET specs
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