All MOSFET. 24N6LG Datasheet

 

24N6LG Datasheet and Replacement


   Type Designator: 24N6LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025(typ) Ohm
   Package: TO252
 

 24N6LG substitution

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24N6LG Datasheet (PDF)

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24N6LG

24N6LG-VB TO252www.VBsemi.comDisclaimerAll products due to improve reliability, function or design or for other reasons, product specifications anddata are subject to change without notice.Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or theirrepresentatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for an

Datasheet: SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB , SLD60N04TB , SLD65R1K2E7 , K2611 , 2SK737 , STF4N90K5 , SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , SLF65R600E7C .

History: WMO80R480S | 2SK1380 | RU60C20R5 | SLD120N03TB | RU60D5H | RU60E16L

Keywords - 24N6LG MOSFET datasheet

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