All MOSFET. 24N6LG Datasheet

 

24N6LG Datasheet and Replacement


   Type Designator: 24N6LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025(typ) Ohm
   Package: TO252
 

 24N6LG substitution

   - MOSFET ⓘ Cross-Reference Search

 

24N6LG Datasheet (PDF)

 ..1. Size:225K  1
 24n6lg.pdf pdf_icon

24N6LG

24N6LG-VB TO252www.VBsemi.comDisclaimerAll products due to improve reliability, function or design or for other reasons, product specifications anddata are subject to change without notice.Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or theirrepresentatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for an

Datasheet: SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB , SLD60N04TB , SLD65R1K2E7 , IRFZ48N , 2SK737 , STF4N90K5 , SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , SLF65R600E7C .

Keywords - 24N6LG MOSFET datasheet

 24N6LG cross reference
 24N6LG equivalent finder
 24N6LG lookup
 24N6LG substitution
 24N6LG replacement

 

 
Back to Top

 


 
.