SLF8N65SV MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

SLF8N65SV Specs and Replacement

Type Designator: SLF8N65SV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 155 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO220F

SLF8N65SV substitution

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SLF8N65SV datasheet

..1. Size:2092K maple semi
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7.1. Size:361K maple semi
slp8n65c slf8n65c.pdf pdf_icon

SLP8N65C/SLF8N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.5A, 650V, RDS(on) typ. = 1.2 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 29nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p... See More ⇒

8.1. Size:303K maple semi
slp8n60c slf8n60c.pdf pdf_icon

SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.5A, 600V, RDS(on) typ. = 1.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 29nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒

Detailed specifications: SLF65R180E7C, SLF65R1K2E7, SLF65R280E7C, SLF65R380E7C, SLF65R600E7C, SLF70R280E7C, SLF70R380E7C, SLF80R830GT, IRF740, SLM120N06G, SLM150N04G, SLM160N04G, SLP65R180E7C, SLP65R1K2E7, SLP65R380E7C, SLP730S, SLT65R180E7C