SLF8N65SV Datasheet and Replacement
Type Designator: SLF8N65SV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 155 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 86 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO220F
SLF8N65SV substitution
SLF8N65SV Datasheet (PDF)
slf8n65sv.pdf
SLF8N65SV650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 8A*, 650V, RDS(on),typ =1.3planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 20nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-
slp8n65c slf8n65c.pdf
SLP8N65C/SLF8N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.5A, 650V, RDS(on) typ. = 1.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 29nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp
slp8n60c slf8n60c.pdf
SLP8N60C / SLF8N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.5A, 600V, RDS(on) typ. = 1.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 29nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching
Datasheet: SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , SLF65R600E7C , SLF70R280E7C , SLF70R380E7C , SLF80R830GT , IRF740 , SLM120N06G , SLM150N04G , SLM160N04G , SLP65R180E7C , SLP65R1K2E7 , SLP65R380E7C , SLP730S , SLT65R180E7C .
History: WMQ023N03LG2 | IRFBC30APBF
Keywords - SLF8N65SV MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WMQ023N03LG2 | IRFBC30APBF
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