All MOSFET. SLM120N06G Datasheet

 

SLM120N06G Datasheet and Replacement


   Type Designator: SLM120N06G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: PDFN5X6
 

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SLM120N06G Datasheet (PDF)

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SLM120N06G

SLM120N06G60V N -Channel MOSFETGeneral DescriptionFeatures- N-Channel: 60V 120AThis Power MOSFET is produced using Msemiteks RDS(on)Typ=2.6m@VGS = 10 Vadvanced Shielded Gate Trench MOSFET technology. - Very Low On-resistance RDS(ON)This advanced technology has been especially tailored - Low Crss to minimize on-state resistance, provide superior switching - Fast swit

Datasheet: SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , SLF65R600E7C , SLF70R280E7C , SLF70R380E7C , SLF80R830GT , SLF8N65SV , IRF840 , SLM150N04G , SLM160N04G , SLP65R180E7C , SLP65R1K2E7 , SLP65R380E7C , SLP730S , SLT65R180E7C , SLT70R180E7C .

History: WMQ023N03LG2 | IRFBC30APBF

Keywords - SLM120N06G MOSFET datasheet

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