SLM120N06G Specs and Replacement
Type Designator: SLM120N06G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 770 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: PDFN5X6
SLM120N06G substitution
- MOSFET ⓘ Cross-Reference Search
SLM120N06G datasheet
slm120n06g.pdf
SLM120N06G 60V N -Channel MOSFET General Description Features - N-Channel 60V 120A This Power MOSFET is produced using Msemitek s RDS(on)Typ=2.6m @VGS = 10 V advanced Shielded Gate Trench MOSFET technology. - Very Low On-resistance RDS(ON) This advanced technology has been especially tailored - Low Crss to minimize on-state resistance, provide superior switching - Fast swit... See More ⇒
Detailed specifications: SLF65R1K2E7, SLF65R280E7C, SLF65R380E7C, SLF65R600E7C, SLF70R280E7C, SLF70R380E7C, SLF80R830GT, SLF8N65SV, IRF840, SLM150N04G, SLM160N04G, SLP65R180E7C, SLP65R1K2E7, SLP65R380E7C, SLP730S, SLT65R180E7C, SLT70R180E7C
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: MDV1527URH | SL50N02D | SL4N150T | SL4449A | SM3308NSQA | SL4N150P | 2SK4057-ZK-E1-AY
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