SLP65R180E7C MOSFET Datasheet: N-Ch, 650V, 22A. Full specification with pinout and replacement list

SLP65R180E7C Specs and Replacement

Type Designator: SLP65R180E7C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220

SLP65R180E7C substitution

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SLP65R180E7C datasheet

..1. Size:4711K maple semi
slp65r180e7c.pdf pdf_icon

SLP65R180E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 22A, 650V, RDS(on),Typ = 150m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

7.1. Size:4335K maple semi
slp65r1k2e7.pdf pdf_icon

SLP65R1K2E7 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 4.9A, 650V, RDS(on),Typ = 1.0 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switching... See More ⇒

8.1. Size:4689K maple semi
slp65r380e7c.pdf pdf_icon

SLP65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

8.2. Size:569K maple semi
slp65r420s2 slf65r420s2.pdf pdf_icon

SLP65R420S2/SLF65R420S2 650V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 650V, RDS(on)typ= 0.33 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 23nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe... See More ⇒

Detailed specifications: SLF65R600E7C, SLF70R280E7C, SLF70R380E7C, SLF80R830GT, SLF8N65SV, SLM120N06G, SLM150N04G, SLM160N04G, IRF540, SLP65R1K2E7, SLP65R380E7C, SLP730S, SLT65R180E7C, SLT70R180E7C, SLU4N65U, SLD65R280E7C, SLD65R380E7C