SLP65R180E7C - аналоги и даташиты транзистора

 

SLP65R180E7C - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SLP65R180E7C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 205 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 54 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SLP65R180E7C

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLP65R180E7C Datasheet (PDF)

 ..1. Size:4711K  maple semi
 slp65r180e7c.pdf pdf_icon

SLP65R180E7C

SLP65R180E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 22A, 650V, RDS(on),Typ = 150mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 7.1. Size:4335K  maple semi
 slp65r1k2e7.pdf pdf_icon

SLP65R180E7C

SLP65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switching

 8.1. Size:4689K  maple semi
 slp65r380e7c.pdf pdf_icon

SLP65R180E7C

SLP65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.2. Size:569K  maple semi
 slp65r420s2 slf65r420s2.pdf pdf_icon

SLP65R180E7C

SLP65R420S2/SLF65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLF65R600E7C , SLF70R280E7C , SLF70R380E7C , SLF80R830GT , SLF8N65SV , SLM120N06G , SLM150N04G , SLM160N04G , IRF540 , SLP65R1K2E7 , SLP65R380E7C , SLP730S , SLT65R180E7C , SLT70R180E7C , SLU4N65U , SLD65R280E7C , SLD65R380E7C .

 

 
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