SLU4N65U Datasheet and Replacement
Type Designator: SLU4N65U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 108.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 155 °C
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 47 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO251
SLU4N65U substitution
SLU4N65U Datasheet (PDF)
slu4n65u.pdf

SLU4N65U650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 4A, 650V, RDS(on),typ =2.55planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 12nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-
Datasheet: SLM150N04G , SLM160N04G , SLP65R180E7C , SLP65R1K2E7 , SLP65R380E7C , SLP730S , SLT65R180E7C , SLT70R180E7C , IRFB4110 , SLD65R280E7C , SLD65R380E7C , SLD65R600E7C , SLD80N02TB , SLD8N50UD , SLD8N65SV , SLD90N02TB , SLD90N03TB .
History: FDPF18N20FT | IRF2807ZL
Keywords - SLU4N65U MOSFET datasheet
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History: FDPF18N20FT | IRF2807ZL



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