All MOSFET. SLH10RN20T Datasheet

 

SLH10RN20T Datasheet and Replacement


   Type Designator: SLH10RN20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 481 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 142 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO247
 

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SLH10RN20T Datasheet (PDF)

 ..1. Size:6291K  maple semi
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SLH10RN20T

SLH10RN20T200V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 142A, 200V, RDS(on),typ =8.9mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 239nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse i

Datasheet: SLD90N02TB , SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , SLF10N65SV , SLF12N65SV , SLF16N65S , SLF95R760GTZ , IRF630 , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 , MD20N50 , MD25N50 .

History: SUN0760I2 | SI9424DY-T1-E3

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