All MOSFET. MDT4N65 Datasheet

 

MDT4N65 Datasheet and Replacement


   Type Designator: MDT4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO252
 

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MDT4N65 Datasheet (PDF)

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MDT4N65

Silicon N-Channel Power MOSFETDescriptionMDT4N65, This Power MOSFET is produced using Wisdomsadvanced planar stripe, DMOS technology. This latest technologyhas been especially designed to minimize on-state resistance,have a high rugged avalanche characteristics. These devices arewell suited for high efficiency switch mode power supplies, activepower factor correction, electroni

Datasheet: SLH95R130GTZ , SLI13N50C , MD100N20 , MD20N50 , MD25N50 , MD50N20 , MD70N10 , MDT30P10D , AON7410 , MPF10N65 , MPG08N68P , MPG08N68S , MPG120N06P , MPG120N06S , MPG150N10P , MPG150N10S , MPT035N08P .

History: TMD4N60 | SLH60R043E7D | KF5N53FS | D50N06 | STE26NA90 | MDP1932TH | MDF6N60BTH

Keywords - MDT4N65 MOSFET datasheet

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