MDT4N65 PDF and Equivalents Search

 

MDT4N65 Specs and Replacement

Type Designator: MDT4N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO252

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MDT4N65 datasheet

 ..1. Size:669K  cn minos
 mdt4n65.pdf pdf_icon

MDT4N65

Silicon N-Channel Power MOSFET Description MDT4N65, This Power MOSFET is produced using Wisdom s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electroni... See More ⇒

Detailed specifications: SLH95R130GTZ, SLI13N50C, MD100N20, MD20N50, MD25N50, MD50N20, MD70N10, MDT30P10D, 4435, MPF10N65, MPG08N68P, MPG08N68S, MPG120N06P, MPG120N06S, MPG150N10P, MPG150N10S, MPT035N08P

Keywords - MDT4N65 MOSFET specs

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