All MOSFET. MPG150N10P Datasheet

 

MPG150N10P Datasheet and Replacement


   Type Designator: MPG150N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 211 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220
 

 MPG150N10P substitution

   - MOSFET ⓘ Cross-Reference Search

 

MPG150N10P Datasheet (PDF)

 ..1. Size:1048K  cn minos
 mpg150n10p mpg150n10s.pdf pdf_icon

MPG150N10P

100V N-Channel Power MOSFETDESCRIPTIONThe MPG150N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be used in aDS(ON)wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 150A R

Datasheet: MD70N10 , MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S , MPG120N06P , MPG120N06S , 4N60 , MPG150N10S , MPT035N08P , MPT035N08S , , , , , .

Keywords - MPG150N10P MOSFET datasheet

 MPG150N10P cross reference
 MPG150N10P equivalent finder
 MPG150N10P lookup
 MPG150N10P substitution
 MPG150N10P replacement

 

 
Back to Top

 


 
.